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ALD-Lab

Symposium of the ALD-Lab Dresden

Workshop on Atomic Layer Processing

 


Date: 25 October 2016
Time: 9:00–13:00
Location: Le Bans
 
 
 
 

After several decades of geometric scaling and almost two decades of material equivalent scaling Moore’s law is approaching a new era, which is based on 3D structures. To step into this literally new dimension, one of the challenges technology wise is the need for a deposition technology that is capable to apply all kinds of films (insulators, semiconductors, conductors, polymers) with thickness down to atomic scales with extremely high uniformity (on 300 mm wafers and larger) and perfect conformality. Comparable to the enabling function of RIE in the 70’th and 80’th, CMP in the 90’th and 2000’th, Atomic Layer Deposition (ALD) is currently the key to realize the next generation of scaling.
 
ALD is a very special kind of CVD, where the solidification reaction of precursor gases is strictly separated between a self saturating chemisorption of a first precursor on the substrate and an evidently again self saturating heterogeneous reaction between the absorbent and a second precursor. To separate theses two phases the reactor is typically purged with an inert gas in between the two reaction steps. To grow a film, the steps have to be performed in a sequential cyclic fashion. This technique enables intrinsically the required properties: Excellent control of film thicknes, excellent conformality and uniformity. Comparable to CMP, the strength and value of ALD is not only related to the ALD tool but actually even more depending on the available precursors. Though the concept of ALD appears simple and straight forward in reality it is typically not like that. In the homogeneous growth regime a competing CVD mechanism may show up, in the heterogeneous growth regime different nucleation mechanisms control the initiation of film formation.
 
A novel approach that deviated from ALD is the idea to operate the sequence inversely to remove a film or contamination isotropically from a substrate in a controlled fashion. This Atomic Layer Etching (ALE) is still in a research phase, but appears very desirable for many technological applications in micro- and nanoelectronics.
 
The intention of our symposium is to bring together researchers, process developers, tool makers, precursor suppliers and applicants of this exciting technology that can be summarized as Atomic Layer Processing.
 

AGENDA 2016

9:00
 
Welcome Address and Introduction of ALD Lab Saxony
Johann W. Bartha, TU Dresden, IHM
9:20
 
Growth of Ultrathin Cu Films Deposited by Atomic Layer Deposition for BEOL Application
Stefan E. Schulz, Fraunhofer ENAS
9:40
 
Development of Spatial ALD at the LMGP: Application to Transparent Conductive Materials
M. David Muñoz-Rojas, LMGP, Grenoble INP
10:00
 
How Fast Can We Go : Thermal ALD with Millisecond Purge Times
Jacques C. S. Kools, Encapsulix SAS
10:20
 
Atomic Layer Etching
Fred Roozeboom, TNO - Solliance, TU Eindhoven
10:40
 
Break
11:20
 
Visualization of Nucleation Mechanism During Atomic Layer Deposition with Scanning Probe Techniques
Marion Geidel, Johanna Reif, TU Dresden, IHM
11:40
 
Plasma ALD of Conductive Nitrides and Metals
Harm C. M. Knoops, Oxford Instruments
12:00
 
TBA
Air Liquide
12:20
 
ALD for Optical Applications
Tero Pilvi, Picosun Oy
12:40
 
Closing Address
Johann W. Bartha, TU Dresden, IHM

 

 

Registration

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No pre-registration required but you must register as a visitor, in order to gain access to the venue.
We recommend to arrive early as seating is limited.
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